回收報廢芯(xin)片(pian)(pian)廢舊(jiu)ic
最大化(hua)利用資源,控制(zhi)電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)元(yuan)件(jian)是(shi)一個無可(ke)或(huo)缺(que)的(de)元(yuan)件(jian),其中(zhong)手機、電(dian)(dian)(dian)(dian)(dian)腦和電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)產品中(zhong)都有ic芯(xin)片(pian)(pian),ic也可(ke)稱為集成(cheng)(cheng)電(dian)(dian)(dian)(dian)(dian)路(lu),是(shi)將大量的(de)微電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)元(yuan)器件(jian)(晶體管、電(dian)(dian)(dian)(dian)(dian)阻、電(dian)(dian)(dian)(dian)(dian)容(rong)等)形成(cheng)(cheng)的(de)集成(cheng)(cheng)電(dian)(dian)(dian)(dian)(dian)路(lu)放(fang)在(zai)一塊塑(su)基(ji)上,做成(cheng)(cheng)一塊芯(xin)片(pian)(pian)。而今幾乎所有看到的(de)芯(xin)片(pian)(pian),都可(ke)以叫做IC芯(xin)片(pian)(pian),良品ic到廢舊(jiu)ic導致的(de)原(yuan)因很多(duo),其中(zhong)電(dian)(dian)(dian)(dian)(dian)擊損壞占多(duo)數,下面(mian)我們來了解一下ic的(de)相(xiang)關(guan)知識。
ic在人體靜電(dian)下是(shi)否會損壞?
隨著靜(jing)(jing)電(dian)防護在各電(dian)子(zi)制造企業的(de)實(shi)踐中(zhong),企業也提出了(le)不(bu)少針對(dui)靜(jing)(jing)電(dian)防護的(de)具體(ti)(ti)問(wen)題,甚至(zhi)于(yu)對(dui)靜(jing)(jing)電(dian)防護的(de)總體(ti)(ti)認知產(chan)生了(le)很(hen)多(duo)問(wen)號、懷疑。其中(zhong)常被提及(ji)的(de)問(wen)題之一,工廠都(dou)了(le)解人體(ti)(ti)高靜(jing)(jing)電(dian)會對(dui)電(dian)子(zi)器件(以各種(zhong)IC為主)構成危害(hai),這(zhe)種(zhong)普遍認識沒有(you)問(wen)題。
但是(shi)大部分的電(dian)子企(qi)(qi)業(ye)(ye)很(hen)難形成靜電(dian)防護與生產(chan)良(liang)率(lv)或品質損失的關(guan)聯認(ren)知。那么(me),是(shi)否人體一旦靜電(dian)不受控,裸手觸摸靜電(dian)敏感IC,就會(hui)導(dao)致IC損壞(huai)么(me)?而事實上,確實有企(qi)(qi)業(ye)(ye)驗證過,很(hen)少有發現IC(HBM-200V)損壞(huai),即使(shi)是(shi)人體靜電(dian)達1000V。
要(yao)解決(jue)這(zhe)個問題,就需要(yao)深入到了解IC器件ESD失(shi)(shi)(shi)效(xiao)(xiao)機(ji)理(li)的(de)層(ceng)面上。例如IC器件中(zhong)常見的(de)MOS(Metal Oxdide
Semiconductor)管(guan),其主要(yao)ESD失(shi)(shi)(shi)效(xiao)(xiao)機(ji)理(li)是電極絕緣(yuan)層(ceng)(電介質層(ceng))在遭(zao)受過高(gao)的(de)靜電場作用下發生(sheng)擊穿,瞬間產(chan)生(sheng)大(da)ESD電流導致絕緣(yuan)層(ceng)發生(sheng)熱損壞,從(cong)而導致IC的(de)原(yuan)有設計(ji)功能失(shi)(shi)(shi)效(xiao)(xiao)。由此認(ren)識得出,IC器件中(zhong)絕緣(yuan)層(ceng)受到較高(gao)的(de)靜電場作用,才是IC是否發生(sheng)ESD失(shi)(shi)(shi)效(xiao)(xiao)的(de)根本因素。
集成(cheng)電(dian)路(lu)(Integrated
Circuit)是一(yi)種微(wei)型電(dian)子(zi)器件或部(bu)件。采用一(yi)定的(de)(de)工藝(yi),把一(yi)個電(dian)路(lu)中(zhong)所(suo)需的(de)(de)晶體管、二極(ji)管、電(dian)阻、電(dian)容和電(dian)感等元(yuan)件及布線(xian)互連一(yi)起,制作(zuo)在(zai)一(yi)小塊或幾小塊半導(dao)體晶片或介質基片上(shang),然后(hou)封(feng)裝(zhuang)在(zai)一(yi)個管殼內,成(cheng)為具有所(suo)需電(dian)路(lu)功能的(de)(de)微(wei)型結構;其(qi)中(zhong)所(suo)有元(yuan)件在(zai)結構上(shang)已組成(cheng)一(yi)個整體,使電(dian)子(zi)元(yuan)件向著(zhu)微(wei)小型化、低(di)功耗(hao)和高可(ke)靠性方面邁進了一(yi)大步(bu)。
此(ci)時,我們再拿(na)帶高(gao)靜(jing)電(dian)(dian)的(de)(de)人(ren)員(yuan)裸手觸(chu)摸靜(jing)電(dian)(dian)敏感(gan)(gan)的(de)(de)IC管(guan)腳的(de)(de)ESD情形與帶高(gao)靜(jing)電(dian)(dian)的(de)(de)人(ren)員(yuan)裸手去觸(chu)碰有管(guan)腳接(jie)地的(de)(de)靜(jing)電(dian)(dian)敏感(gan)(gan)IC做對(dui)(dui)比,兩(liang)者的(de)(de)主要差(cha)別在于(yu)人(ren)體對(dui)(dui)IC接(jie)觸(chu)放電(dian)(dian)時,IC是否有管(guan)腳處(chu)于(yu)接(jie)地狀態。而此(ci)差(cha)別就導致了IC中的(de)(de)靜(jing)電(dian)(dian)敏感(gan)(gan)結構(如(ru)電(dian)(dian)極絕(jue)緣(yuan)層)經(jing)受的(de)(de)ESD風(feng)險(xian)差(cha)異(絕(jue)緣(yuan)層的(de)(de)靜(jing)電(dian)(dian)擊穿)迥然不同(tong)。
如果(guo)作(zuo)以粗略的(de)(de)比喻以方便理解(jie),大致得出人體(ti)對無管(guan)腳接地的(de)(de)IC接觸(chu)放電(dian)(dian)(dian),放電(dian)(dian)(dian)路徑短,ESD轉移的(de)(de)靜(jing)(jing)電(dian)(dian)(dian)荷量就(jiu)低(di);而(er)有管(guan)腳接地的(de)(de)IC,在受(shou)到同樣的(de)(de)人體(ti)接觸(chu)放電(dian)(dian)(dian)情形下,放電(dian)(dian)(dian)路徑要長(chang)很(hen)多,ESD轉移的(de)(de)靜(jing)(jing)電(dian)(dian)(dian)荷量也就(jiu)高(gao)很(hen)多,所造成的(de)(de)ESD損壞(huai)風險(xian)也就(jiu)高(gao)出很(hen)多。
同樣的情形,對(dui)于(yu)PCBA(Printed Circuit Board
Assembly,印制(zhi)電路板組(zu)件)也有類似的效(xiao)果(guo),有接(jie)地的PCBA,在遭受人(ren)體的靜電放電,ESD失(shi)效(xiao)風險顯著升高(gao)。
報廢芯片(pian)廢舊ic的最(zui)大化利(li)(li)用資源(yuan),最(zui)好的方法就是通過回(hui)(hui)收(shou)來(lai)解決,回(hui)(hui)收(shou)ic處(chu)理通過維(wei)修(xiu)拆(chai)解來(lai)利(li)(li)用現有(you)的資源(yuan)。IC芯片(pian)的組成(cheng)有(you)電(dian)(dian)阻、電(dian)(dian)容、晶體二極管、電(dian)(dian)感,這些電(dian)(dian)子元件都可(ke)通過回(hui)(hui)收(shou)拆(chai)解,測試是否為良(liang)品后(hou)再重(zhong)新(xin)利(li)(li)用。我司作為一家(jia)專業的ic回(hui)(hui)收(shou)商,有(you)責(ze)任有(you)義務減少(shao)客戶的損失(shi),如(ru)有(you)手機ic、電(dian)(dian)腦ic等各種ic芯片(pian)都可(ke)聯(lian)系超興勝(sheng)電(dian)(dian)子。